unisonic technologies co., ltd uf634 preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2011 unisonic technologies co., ltd qw-r502-454.b advanced power mosfet ? description the utc uf634 is a n-channel power mosfet and it uses utc advanced technology to provide customers with lower r ds(on), improved gate charge and so on. ? features * lower input capacitance * improved gate charge * lower leakage current: 10 a (max.) @ v ds = 250v * avalanche rugged technology * rugged gate oxide technology * extended safe operating area ? symbol ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing uf634l-ta3-t uf634g-ta3-t to-220 g d s tube UF634L-TF1-T uf634g-tf1-t to-220f1 g d s tube note: g: gain, d:drain, s:source
uf634 preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-454.b ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit gate-to-source voltage v gs 30 v drain-to-source voltage v dss 250 v t c =25c 8.1 continuous drain current t c =100c i d 5.1 a drain current-pulsed (note 2) i dm 32 a avalanche current (note 2) i ar 8.1 a single pulsed avalanche energy (note 3) e as 205 mj repetitive avalanche energy (note 2) e ar 7.4 mj to-220 74 w power dissipation to-220f1 p d 38 w operating junction temperature t j +150 c storage temperature t stg -55~+150 c 1. absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width limi ted by maximum junction temperature 3. l=5mh, i as =8.1a, v dd =50v, r g =27 ? , starting t j =25c note: 4. i sd 8.1a, di/dt 210a/s, v dd bv dss , starting t j =25c ? thermal resistance parameter symbol ratings unit junction to ambient to-220/ to-220f1 ja 62.5 c/w to-220 1.69 c/w junction to case to-220f1 jc 3.29 c/w
uf634 preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-454.b ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 250 v breakdown voltage temperature coefficient bv/ t j i d =250a 0.29 v/c v ds =250v 10 drain-source leakage current i dss v ds =200v, t j =125c 100 a gate- source leakage current i gss v gs =30v 100 na on characteristics gate threshold voltage v gs(th) v ds =5v, i d =250a 2.0 4.0 v static drain-source on-state resistance r ds(on) v gs =10v, i d =-4.05a 0.45 ? dynamic parameters input capacitance c iss 730 950 pf output capacitance c oss 110 130 pf reverse transfer capacitance c rss v gs =0v, v ds =25v, f=1.0mhz 50 60 pf switching parameters total gate charge q g 30 40 nc gate to source charge q gs 5.8 nc gate to drain charge q gd v gs =10v, v ds =200v, i d =8.1a (note 1, 2) 13.5 nc turn-on delay time t d(on) 13 40 ns rise time t r 14 40 ns turn-off delay time t d(off) 53 120 ns fall-time t f v dd =125v, i d =8.1a, r g =12 ? (note 1, 2) 21 50 ns source- drain diode ratings and characteristics drain-source diode forward voltage (note 2) v sd i s =8.1a, v gs =0v, t j =25c 1.5 v maximum body-diode continuous current i s 8.1 a pulsed-source current (note 1) i sm integral reverse pn-diode in the mosfet 32 a reverse recovery time (note 2) t rr 190 ns reverse recovery charge (note 2) q rr di f /dt=100a/s, t j =25c, i f =8.1a 1.28 c note: 1. repetitive rating: pulse width limited by maximum junction temperature 2. pulse test: pulse width = 250s, duty cycle 2% 3. essentially independent of operating temperature
uf634 preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-454.b ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
uf634 preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-454.b ? test circuits and waveforms (cont.) v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms 10v charge q gs q gd q g v gs gate charge test circuit gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
uf634 preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-454.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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